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onsemi N-Channel MOSFET, 79 A, 30 V, 8-Pin SO-8FL NTMFS4936NT1G

RS tootekood: 163-1134Bränd: onsemiTootja Part nr.: NTMFS4936NT1G
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

19 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 553,50

€ 0,369 tk (rullis 1500) (ilma käibemaksuta)

€ 675,27

€ 0,45 tk (rullis 1500) (koos käibemaksuga)

onsemi N-Channel MOSFET, 79 A, 30 V, 8-Pin SO-8FL NTMFS4936NT1G

€ 553,50

€ 0,369 tk (rullis 1500) (ilma käibemaksuta)

€ 675,27

€ 0,45 tk (rullis 1500) (koos käibemaksuga)

onsemi N-Channel MOSFET, 79 A, 30 V, 8-Pin SO-8FL NTMFS4936NT1G
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

19 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more