Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL

RS tootekood: 171-2383Bränd: ToshibaTootja Part nr.: TPHR8504PL
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

340 A

Maximum Drain Source Voltage

40 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

103 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

0.95mm

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Lao andmed ajutiselt ei ole saadaval.

€ 11,00

€ 2,20 tk (pakis 5) (ilma käibemaksuta)

€ 13,42

€ 2,684 tk (pakis 5) (koos käibemaksuga)

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL
Valige pakendi tüüp

€ 11,00

€ 2,20 tk (pakis 5) (ilma käibemaksuta)

€ 13,42

€ 2,684 tk (pakis 5) (koos käibemaksuga)

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

340 A

Maximum Drain Source Voltage

40 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

103 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more