Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 125,00
€ 1,25 tk (rullis) (ilma käibemaksuta)
€ 155,00
€ 1,55 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 125,00
€ 1,25 tk (rullis) (ilma käibemaksuta)
€ 155,00
€ 1,55 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
100 - 240 | € 1,25 | € 12,50 |
250 - 490 | € 1,05 | € 10,50 |
500 - 990 | € 0,98 | € 9,80 |
1000+ | € 0,915 | € 9,15 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad