Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Päritoluriik
Korea, Republic Of
Toote üksikasjad
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 37,50
€ 1,50 tk (rullis) (ilma käibemaksuta)
€ 46,50
€ 1,86 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
25
€ 37,50
€ 1,50 tk (rullis) (ilma käibemaksuta)
€ 46,50
€ 1,86 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
25 - 45 | € 1,50 | € 7,50 |
50 - 120 | € 1,45 | € 7,25 |
125 - 245 | € 1,35 | € 6,75 |
250+ | € 1,20 | € 6,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Päritoluriik
Korea, Republic Of
Toote üksikasjad