Semikron Danfoss SKM400GB126D Dual Half Bridge IGBT Module, 470 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Semikron DanfossMaximum Continuous Collector Current
470 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 468,00
€ 468,00 tk (ilma käibemaksuta)
€ 570,96
€ 570,96 tk (koos käibemaksuga)
1
€ 468,00
€ 468,00 tk (ilma käibemaksuta)
€ 570,96
€ 570,96 tk (koos käibemaksuga)
1
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind |
|---|---|
| 1 - 1 | € 468,00 |
| 2 - 4 | € 445,00 |
| 5 - 9 | € 423,00 |
| 10 - 19 | € 402,00 |
| 20+ | € 382,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Semikron DanfossMaximum Continuous Collector Current
470 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Configuration
Dual Half Bridge
Package Type
SEMITRANS3
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products