Texas Instruments NexFET N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON CSD16301Q2

RS tootekood: 162-8525Bränd: Texas InstrumentsTootja Part nr.: CSD16301Q2
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

WSON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Length

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

2mm

Height

0.8mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Lao andmed ajutiselt ei ole saadaval.

€ 612,00

€ 0,204 tk (rullis 3000) (ilma käibemaksuta)

€ 758,88

€ 0,253 tk (rullis 3000) (koos käibemaksuga)

Texas Instruments NexFET N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON CSD16301Q2

€ 612,00

€ 0,204 tk (rullis 3000) (ilma käibemaksuta)

€ 758,88

€ 0,253 tk (rullis 3000) (koos käibemaksuga)

Texas Instruments NexFET N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON CSD16301Q2
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

WSON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Length

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

2mm

Height

0.8mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more