Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 23,72
€ 0,949 tk (torus) (ilma käibemaksuta)
€ 28,94
€ 1,158 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
€ 23,72
€ 0,949 tk (torus) (ilma käibemaksuta)
€ 28,94
€ 1,158 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
25 - 45 | € 0,949 | € 4,74 |
50 - 245 | € 0,84 | € 4,20 |
250 - 495 | € 0,726 | € 3,63 |
500+ | € 0,643 | € 3,22 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Toote üksikasjad