N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS

RS tootekood: 827-4906PBränd: Texas InstrumentsTootja Part nr.: CSD18537NKCS
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

54 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

16.51mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Lao andmed ajutiselt ei ole saadaval.

€ 23,72

€ 0,949 tk (torus) (ilma käibemaksuta)

€ 28,94

€ 1,158 tk (torus) (koos käibemaksuga)

N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS
Valige pakendi tüüp

€ 23,72

€ 0,949 tk (torus) (ilma käibemaksuta)

€ 28,94

€ 1,158 tk (torus) (koos käibemaksuga)

N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Tuub
25 - 45€ 0,949€ 4,74
50 - 245€ 0,84€ 4,20
250 - 495€ 0,726€ 3,63
500+€ 0,643€ 3,22

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

54 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

16.51mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada