Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
6.22mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1 656,00
€ 0,828 tk (rullis 2000) (ilma käibemaksuta)
€ 2 020,32
€ 1,01 tk (rullis 2000) (koos käibemaksuga)
2000
€ 1 656,00
€ 0,828 tk (rullis 2000) (ilma käibemaksuta)
€ 2 020,32
€ 1,01 tk (rullis 2000) (koos käibemaksuga)
2000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
6.22mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products