Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
7.8 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
45.6 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Height
1.5mm
Series
ThunderFET
Minimum Operating Temperature
-55 °C
Päritoluriik
Taiwan, Province Of China
P.O.A.
tk (rullis 2500) (ilma käibemaksuta)
2500
P.O.A.
tk (rullis 2500) (ilma käibemaksuta)
2500
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
7.8 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
45.6 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Height
1.5mm
Series
ThunderFET
Minimum Operating Temperature
-55 °C
Päritoluriik
Taiwan, Province Of China