Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3

RS tootekood: 710-4764Bränd: VishayTootja Part nr.: SI7850DP-T1-E3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

1.04mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.tk (ilma käibemaksuta)

€ 9,25

€ 1,85 tk (pakis 5) (ilma käibemaksuta)

€ 11,47

€ 2,294 tk (pakis 5) (koos käibemaksuga)

Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
Valige pakendi tüüp

€ 9,25

€ 1,85 tk (pakis 5) (ilma käibemaksuta)

€ 11,47

€ 2,294 tk (pakis 5) (koos käibemaksuga)

Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Pakend
5 - 45€ 1,85€ 9,25
50 - 120€ 1,60€ 8,00
125 - 245€ 1,40€ 7,00
250 - 495€ 1,15€ 5,75
500+€ 0,896€ 4,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.tk (ilma käibemaksuta)

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

1.04mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.tk (ilma käibemaksuta)