Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayMounting Type
Panel Mount
Package Type
SOT-227
Maximum Continuous Forward Current
120A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Isolated
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
4
Maximum Forward Voltage Drop
5.3V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
218ns
Peak Non-Repetitive Forward Surge Current
350A
Päritoluriik
Philippines
Toote üksikasjad
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 550,00
€ 55,00 tk (pakis 10) (ilma käibemaksuta)
€ 671,00
€ 67,10 tk (pakis 10) (koos käibemaksuga)
10
€ 550,00
€ 55,00 tk (pakis 10) (ilma käibemaksuta)
€ 671,00
€ 67,10 tk (pakis 10) (koos käibemaksuga)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Kast |
---|---|---|
10 - 10 | € 55,00 | € 550,00 |
20+ | € 52,00 | € 520,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayMounting Type
Panel Mount
Package Type
SOT-227
Maximum Continuous Forward Current
120A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Isolated
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
4
Maximum Forward Voltage Drop
5.3V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
218ns
Peak Non-Repetitive Forward Surge Current
350A
Päritoluriik
Philippines
Toote üksikasjad
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.