STMicroelectronics STripFET F7 N-Channel MOSFET, 140 A, 60 V, 8-Pin PowerFLAT 5 x 6 STL140N6F7

RS tootekood: 907-4766PBränd: STMicroelectronicsTootja Part nr.: STL140N6F7
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

140 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

5.2mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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€ 17,50

€ 1,75 tk (rullis) (ilma käibemaksuta)

€ 21,70

€ 2,17 tk (rullis) (koos käibemaksuga)

STMicroelectronics STripFET F7 N-Channel MOSFET, 140 A, 60 V, 8-Pin PowerFLAT 5 x 6 STL140N6F7
Valige pakendi tüüp

€ 17,50

€ 1,75 tk (rullis) (ilma käibemaksuta)

€ 21,70

€ 2,17 tk (rullis) (koos käibemaksuga)

STMicroelectronics STripFET F7 N-Channel MOSFET, 140 A, 60 V, 8-Pin PowerFLAT 5 x 6 STL140N6F7

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

140 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

5.2mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more