P-Channel MOSFET Transistor, 1.3 A, 30 V, 3-Pin SOT-23 Vishay SI2303BDS-T1-E3

RS tootekood: 710-4667Bränd: VishayTootja Part nr.: SI2303BDS-T1-E3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

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Vishay P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 SI2303CDS-T1-GE3
€ 0,564tk (pakis 20) (ilma käibemaksuta)
Lao andmed ajutiselt ei ole saadaval.

P.O.A.

tk (pakis 20) (ilma käibemaksuta)

P-Channel MOSFET Transistor, 1.3 A, 30 V, 3-Pin SOT-23 Vishay SI2303BDS-T1-E3
Valige pakendi tüüp

P.O.A.

tk (pakis 20) (ilma käibemaksuta)

P-Channel MOSFET Transistor, 1.3 A, 30 V, 3-Pin SOT-23 Vishay SI2303BDS-T1-E3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Teid võib huvitada
Vishay P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 SI2303CDS-T1-GE3
€ 0,564tk (pakis 20) (ilma käibemaksuta)

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
Vishay P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 SI2303CDS-T1-GE3
€ 0,564tk (pakis 20) (ilma käibemaksuta)