Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 30 V, 3-Pin TO-220 IPP055N03LGXKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.36mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Number of Elements per Chip
1
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Päritoluriik
China
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 48,05
€ 0,961 tk (torus 50) (ilma käibemaksuta)
€ 59,58
€ 1,192 tk (torus 50) (koos käibemaksuga)
50
€ 48,05
€ 0,961 tk (torus 50) (ilma käibemaksuta)
€ 59,58
€ 1,192 tk (torus 50) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
50
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 50 - 50 | € 0,961 | € 48,05 |
| 100 - 200 | € 0,74 | € 37,00 |
| 250 - 450 | € 0,711 | € 35,55 |
| 500 - 1200 | € 0,683 | € 34,15 |
| 1250+ | € 0,596 | € 29,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.36mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Number of Elements per Chip
1
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Päritoluriik
China
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products