IXYS HiperFET, Q-Class N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

RS tootekood: 920-0978Bränd: IXYSTootja Part nr.: IXFK48N60Q3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Q-Class

Package Type

TO-264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

1 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.13mm

Transistor Material

Si

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

26.16mm

Minimum Operating Temperature

-55 °C

Päritoluriik

United States

Toote üksikasjad

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Lao andmed ajutiselt ei ole saadaval.

€ 465,00

€ 18,60 tk (torus 25) (ilma käibemaksuta)

€ 567,30

€ 22,692 tk (torus 25) (koos käibemaksuga)

IXYS HiperFET, Q-Class N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3

€ 465,00

€ 18,60 tk (torus 25) (ilma käibemaksuta)

€ 567,30

€ 22,692 tk (torus 25) (koos käibemaksuga)

IXYS HiperFET, Q-Class N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3
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Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Q-Class

Package Type

TO-264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

1 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.13mm

Transistor Material

Si

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

26.16mm

Minimum Operating Temperature

-55 °C

Päritoluriik

United States

Toote üksikasjad

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more