Nexperia BSN20BK N-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSN20BKR
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
BSN20BK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Toote üksikasjad
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 94,80
€ 0,158 tk (rullis) (ilma käibemaksuta)
€ 115,66
€ 0,193 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
600
€ 94,80
€ 0,158 tk (rullis) (ilma käibemaksuta)
€ 115,66
€ 0,193 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
600
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 600 - 1400 | € 0,158 | € 15,80 |
| 1500+ | € 0,136 | € 13,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
BSN20BK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
0.49 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Toote üksikasjad
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products