onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055-100T1G

RS tootekood: 793-1055Bränd: onsemiTootja Part nr.: NTF3055-100T1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Typical Gate Charge @ Vgs

22 nC @ 10 V dc

Maximum Operating Temperature

+175 °C

Length

6.7mm

Minimum Operating Temperature

-55 °C

Height

1.65mm

Toote üksikasjad

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 7,79

€ 0,779 tk (pakis 10) (ilma käibemaksuta)

€ 9,50

€ 0,95 tk (pakis 10) (koos käibemaksuga)

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055-100T1G
Valige pakendi tüüp

€ 7,79

€ 0,779 tk (pakis 10) (ilma käibemaksuta)

€ 9,50

€ 0,95 tk (pakis 10) (koos käibemaksuga)

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055-100T1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Pakend
10 - 90€ 0,779€ 7,79
100 - 240€ 0,671€ 6,71
250 - 490€ 0,582€ 5,82
500+€ 0,512€ 5,12

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Typical Gate Charge @ Vgs

22 nC @ 10 V dc

Maximum Operating Temperature

+175 °C

Length

6.7mm

Minimum Operating Temperature

-55 °C

Height

1.65mm

Toote üksikasjad

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more