STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6

RS tootekood: 202-5496Bränd: STMicroelectronicsTootja Part nr.: STB33N60DM6
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

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Lao andmed ajutiselt ei ole saadaval.

€ 20,00

€ 10,00 tk (pakis 2) (ilma käibemaksuta)

€ 24,40

€ 12,20 tk (pakis 2) (koos käibemaksuga)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6
Valige pakendi tüüp

€ 20,00

€ 10,00 tk (pakis 2) (ilma käibemaksuta)

€ 24,40

€ 12,20 tk (pakis 2) (koos käibemaksuga)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6
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kogusÜhikuhindPer Pakend
2 - 48€ 10,00€ 20,00
50 - 98€ 7,10€ 14,20
100 - 248€ 6,80€ 13,60
250 - 498€ 6,70€ 13,40
500+€ 6,50€ 13,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more