Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Toote üksikasjad
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 357,00
€ 35,70 tk (torus 10) (ilma käibemaksuta)
€ 435,54
€ 43,554 tk (torus 10) (koos käibemaksuga)
10
€ 357,00
€ 35,70 tk (torus 10) (ilma käibemaksuta)
€ 435,54
€ 43,554 tk (torus 10) (koos käibemaksuga)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
10 - 40 | € 35,70 | € 357,00 |
50 - 90 | € 34,10 | € 341,00 |
100 - 190 | € 30,10 | € 301,00 |
200 - 490 | € 28,10 | € 281,00 |
500+ | € 26,10 | € 261,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
ISOTOP
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
307.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.1mm
Minimum Operating Temperature
-65 °C
Toote üksikasjad