Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin D2PAK SIHF9620S-GE3

RS tootekood: 815-2660Bränd: VishayTootja Part nr.: SIHF9620S-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

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P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 9,81

€ 0,981 tk (pakis 10) (ilma käibemaksuta)

€ 11,97

€ 1,197 tk (pakis 10) (koos käibemaksuga)

Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin D2PAK SIHF9620S-GE3
Valige pakendi tüüp

€ 9,81

€ 0,981 tk (pakis 10) (ilma käibemaksuta)

€ 11,97

€ 1,197 tk (pakis 10) (koos käibemaksuga)

Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin D2PAK SIHF9620S-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
10 - 90€ 0,981€ 9,81
100 - 240€ 0,738€ 7,38
250 - 490€ 0,61€ 6,10
500 - 990€ 0,54€ 5,40
1000+€ 0,514€ 5,14

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more