Infineon OptiMOS™ Dual N/P-Channel-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSOP-6 BSL215CH6327XTSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Series
OptiMOS™
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ, 280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6 V, 1.2V
Minimum Gate Threshold Voltage
0.7 V, 1.2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
0.73 nC @ 4.5 V, 3 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Toote üksikasjad
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 19,80
€ 0,33 tk (rullis) (ilma käibemaksuta)
€ 24,16
€ 0,403 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
60
€ 19,80
€ 0,33 tk (rullis) (ilma käibemaksuta)
€ 24,16
€ 0,403 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
60
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Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Series
OptiMOS™
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ, 280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.6 V, 1.2V
Minimum Gate Threshold Voltage
0.7 V, 1.2V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
0.73 nC @ 4.5 V, 3 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Toote üksikasjad
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products