Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 1 650,00
€ 0,66 tk (rullis 2500) (ilma käibemaksuta)
€ 2 046,00
€ 0,818 tk (rullis 2500) (koos käibemaksuga)
2500
€ 1 650,00
€ 0,66 tk (rullis 2500) (ilma käibemaksuta)
€ 2 046,00
€ 0,818 tk (rullis 2500) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
2500
Lao andmed ajutiselt ei ole saadaval.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products