Nexperia N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 2N7002PW,115
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
260 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
Malaysia
Toote üksikasjad
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 12,00
€ 0,06 tk (pakis 200) (ilma käibemaksuta)
€ 14,64
€ 0,073 tk (pakis 200) (koos käibemaksuga)
Standard
200
€ 12,00
€ 0,06 tk (pakis 200) (ilma käibemaksuta)
€ 14,64
€ 0,073 tk (pakis 200) (koos käibemaksuga)
Standard
200
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
260 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
Malaysia
Toote üksikasjad
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products