STMicroelectronics N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220 STP120NF10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 9,10
€ 4,55 tk (pakis 2) (ilma käibemaksuta)
€ 11,10
€ 5,551 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 9,10
€ 4,55 tk (pakis 2) (ilma käibemaksuta)
€ 11,10
€ 5,551 tk (pakis 2) (koos käibemaksuga)
Standard
2
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET II
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
4.6mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products