Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT

RS tootekood: 162-9739Bränd: Texas InstrumentsTootja Part nr.: CSD19536KTTT
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

272 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

4.83mm

Päritoluriik

Philippines

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Lao andmed ajutiselt ei ole saadaval.

€ 227,50

€ 4,55 tk (rullis 50) (ilma käibemaksuta)

€ 277,55

€ 5,551 tk (rullis 50) (koos käibemaksuga)

Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT

€ 227,50

€ 4,55 tk (rullis 50) (ilma käibemaksuta)

€ 277,55

€ 5,551 tk (rullis 50) (koos käibemaksuga)

Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

272 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

4.83mm

Päritoluriik

Philippines

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more