Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
China
€ 684,00
€ 0,228 tk (rullis 3000) (ilma käibemaksuta)
€ 834,48
€ 0,278 tk (rullis 3000) (koos käibemaksuga)
3000
€ 684,00
€ 0,228 tk (rullis 3000) (ilma käibemaksuta)
€ 834,48
€ 0,278 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
China