Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3

RS tootekood: 787-9018PBränd: VishayTootja Part nr.: TP0610K-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

185 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

1.7 nC @ 15 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 63,00

€ 0,315 tk (rullis) (ilma käibemaksuta)

€ 76,86

€ 0,384 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3
Valige pakendi tüüp

€ 63,00

€ 0,315 tk (rullis) (ilma käibemaksuta)

€ 76,86

€ 0,384 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 185 mA, 60 V, 3-Pin SOT-23 TP0610K-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
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kogusÜhikuhindPer Rull
200 - 480€ 0,315€ 6,30
500 - 980€ 0,284€ 5,68
1000 - 1980€ 0,267€ 5,34
2000+€ 0,252€ 5,04

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

185 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

1.7 nC @ 15 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more