Infineon OptiMOS™-T N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

RS tootekood: 170-2295Bränd: InfineonTootja Part nr.: IPB64N25S320ATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

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€ 3 650,00

€ 3,65 tk (rullis 1000) (ilma käibemaksuta)

€ 4 526,00

€ 4,526 tk (rullis 1000) (koos käibemaksuga)

Infineon OptiMOS™-T N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

€ 3 650,00

€ 3,65 tk (rullis 1000) (ilma käibemaksuta)

€ 4 526,00

€ 4,526 tk (rullis 1000) (koos käibemaksuga)

Infineon OptiMOS™-T N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB64N25S320ATMA1

Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more