International Rectifier IRLML2502 N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF

RS tootekood: 162-3304Bränd: International RectifierTootja Part nr.: IRLML2502TRPBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

IRLML2502

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Length

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

Thailand

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Lao andmed ajutiselt ei ole saadaval.

€ 5,26

€ 0,263 tk (pakis 20) (ilma käibemaksuta)

€ 6,52

€ 0,326 tk (pakis 20) (koos käibemaksuga)

International Rectifier IRLML2502 N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF
Valige pakendi tüüp

€ 5,26

€ 0,263 tk (pakis 20) (ilma käibemaksuta)

€ 6,52

€ 0,326 tk (pakis 20) (koos käibemaksuga)

International Rectifier IRLML2502 N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 IRLML2502TRPBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Pakend
20 - 180€ 0,263€ 5,26
200 - 480€ 0,197€ 3,94
500 - 980€ 0,184€ 3,68
1000 - 1980€ 0,118€ 2,36
2000+€ 0,092€ 1,84

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

IRLML2502

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Length

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more