IXYS HiperFET, Polar N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 254,00
€ 25,40 tk (torus 10) (ilma käibemaksuta)
€ 314,96
€ 31,496 tk (torus 10) (koos käibemaksuga)
10
€ 254,00
€ 25,40 tk (torus 10) (ilma käibemaksuta)
€ 314,96
€ 31,496 tk (torus 10) (koos käibemaksuga)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
66 A
Maximum Drain Source Voltage
500 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
25.07mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
38.2mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products