Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.08mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Toote üksikasjad
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
€ 55,50
€ 0,555 tk (pakis) (ilma käibemaksuta)
€ 68,82
€ 0,688 tk (pakis) (koos käibemaksuga)
Tootmispakett (Kott)
100
€ 55,50
€ 0,555 tk (pakis) (ilma käibemaksuta)
€ 68,82
€ 0,688 tk (pakis) (koos käibemaksuga)
Tootmispakett (Kott)
100
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Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.06mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.08mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Toote üksikasjad
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.