Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 14,46
€ 0,482 tk (pakis 30) (ilma käibemaksuta)
€ 17,93
€ 0,598 tk (pakis 30) (koos käibemaksuga)
Standard
30
€ 14,46
€ 0,482 tk (pakis 30) (ilma käibemaksuta)
€ 17,93
€ 0,598 tk (pakis 30) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
30
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Pakend |
---|---|---|
30 - 30 | € 0,482 | € 14,46 |
60 - 120 | € 0,458 | € 13,74 |
150 - 270 | € 0,289 | € 8,67 |
300 - 570 | € 0,224 | € 6,72 |
600+ | € 0,176 | € 5,28 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
415 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad