Vishay P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC SI4435DDY-T1-GE3

RS tootekood: 710-3339PBränd: VishayTootja Part nr.: SI4435DDY-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8.1 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 4.5 V, 32 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 58,10

€ 0,581 tk (rullis) (ilma käibemaksuta)

€ 72,04

€ 0,72 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC SI4435DDY-T1-GE3
Valige pakendi tüüp

€ 58,10

€ 0,581 tk (rullis) (ilma käibemaksuta)

€ 72,04

€ 0,72 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC SI4435DDY-T1-GE3

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Rull
100 - 490€ 0,581€ 5,81
500 - 990€ 0,488€ 4,88
1000 - 2490€ 0,461€ 4,61
2500+€ 0,428€ 4,28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8.1 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 4.5 V, 32 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more