Vishay Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3

RS tootekood: 165-7255Bränd: VishayTootja Part nr.: SI4599DY-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.7 A, 6.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

42.5 mΩ, 62 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3 W, 3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

11.7 nC @ 10 V, 25 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Päritoluriik

China

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Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 757,50

€ 0,303 tk (rullis 2500) (ilma käibemaksuta)

€ 939,30

€ 0,376 tk (rullis 2500) (koos käibemaksuga)

Vishay Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3

€ 757,50

€ 0,303 tk (rullis 2500) (ilma käibemaksuta)

€ 939,30

€ 0,376 tk (rullis 2500) (koos käibemaksuga)

Vishay Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.7 A, 6.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

42.5 mΩ, 62 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3 W, 3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

11.7 nC @ 10 V, 25 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.55mm

Päritoluriik

China

Toote üksikasjad

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more