Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.26mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 12,38
€ 0,495 tk (pakis 25) (ilma käibemaksuta)
€ 15,10
€ 0,604 tk (pakis 25) (koos käibemaksuga)
Standard
25
€ 12,38
€ 0,495 tk (pakis 25) (ilma käibemaksuta)
€ 15,10
€ 0,604 tk (pakis 25) (koos käibemaksuga)
Standard
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
25 - 100 | € 0,495 | € 12,38 |
125 - 600 | € 0,30 | € 7,50 |
625 - 1225 | € 0,294 | € 7,35 |
1250+ | € 0,286 | € 7,15 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.26mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad