STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N

RS tootekood: 761-2792PBränd: STMicroelectronicsTootja Part nr.: STF26NM60N
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

4.6mm

Height

16.4mm

Toote üksikasjad

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Lao andmed ajutiselt ei ole saadaval.

€ 6,50

€ 6,50 tk (torus) (ilma käibemaksuta)

€ 8,06

€ 8,06 tk (torus) (koos käibemaksuga)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N
Valige pakendi tüüp

€ 6,50

€ 6,50 tk (torus) (ilma käibemaksuta)

€ 8,06

€ 8,06 tk (torus) (koos käibemaksuga)

STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220FP STF26NM60N
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

4.6mm

Height

16.4mm

Toote üksikasjad

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more