Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 70,30
€ 0,703 tk (rullis) (ilma käibemaksuta)
€ 87,17
€ 0,872 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 70,30
€ 0,703 tk (rullis) (ilma käibemaksuta)
€ 87,17
€ 0,872 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 180 | € 0,703 | € 14,06 |
| 200 - 480 | € 0,596 | € 11,92 |
| 500 - 980 | € 0,554 | € 11,08 |
| 1000+ | € 0,53 | € 10,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products