Diodes Inc N-Channel MOSFET, 10.5 A, 30 V, 8-Pin PowerDI3333-8 DMG7430LFG-7

RS tootekood: 770-5115PBränd: DiodesZetexTootja Part nr.: DMG7430LFG-7
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

10.5 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.35mm

Typical Gate Charge @ Vgs

26.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 4,30

€ 0,172 tk (rullis) (ilma käibemaksuta)

€ 5,33

€ 0,213 tk (rullis) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 10.5 A, 30 V, 8-Pin PowerDI3333-8 DMG7430LFG-7
Valige pakendi tüüp

€ 4,30

€ 0,172 tk (rullis) (ilma käibemaksuta)

€ 5,33

€ 0,213 tk (rullis) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 10.5 A, 30 V, 8-Pin PowerDI3333-8 DMG7430LFG-7
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

10.5 A

Maximum Drain Source Voltage

30 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.35mm

Typical Gate Charge @ Vgs

26.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more