Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6.4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
780 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 78,00
tk (rullis) (ilma käibemaksuta)
€ 95,16
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
600
€ 78,00
tk (rullis) (ilma käibemaksuta)
€ 95,16
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
600
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
6.4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
780 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Length
3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
1.1mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad