Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.48mm
Päritoluriik
China
€ 162,00
€ 0,054 tk (rullis 3000) (ilma käibemaksuta)
€ 200,88
€ 0,067 tk (rullis 3000) (koos käibemaksuga)
3000
€ 162,00
€ 0,054 tk (rullis 3000) (ilma käibemaksuta)
€ 200,88
€ 0,067 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.48mm
Päritoluriik
China