Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
15.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
11.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 46,08
€ 0,384 tk (rullis) (ilma käibemaksuta)
€ 57,14
€ 0,476 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
120
€ 46,08
€ 0,384 tk (rullis) (ilma käibemaksuta)
€ 57,14
€ 0,476 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
120
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
120 - 600 | € 0,384 | € 7,68 |
620 - 1240 | € 0,333 | € 6,66 |
1260+ | € 0,279 | € 5,58 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
15.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
11.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad