Diodes Inc P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 DMP2006UFG-7
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 12,70
€ 0,635 tk (pakis 20) (ilma käibemaksuta)
€ 15,49
€ 0,775 tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 12,70
€ 0,635 tk (pakis 20) (ilma käibemaksuta)
€ 15,49
€ 0,775 tk (pakis 20) (koos käibemaksuga)
Standard
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 20 - 80 | € 0,635 | € 12,70 |
| 100 - 480 | € 0,443 | € 8,86 |
| 500 - 980 | € 0,398 | € 7,96 |
| 1000 - 2480 | € 0,355 | € 7,10 |
| 2500+ | € 0,319 | € 6,38 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products