Diodes Inc P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 DMP2008UFG-7

RS tootekood: 822-2611PBränd: DiodesZetexTootja Part nr.: DMP2008UFG-7
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

3.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 82,40

€ 0,206 tk (rullis) (ilma käibemaksuta)

€ 102,18

€ 0,255 tk (rullis) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 DMP2008UFG-7
Valige pakendi tüüp

€ 82,40

€ 0,206 tk (rullis) (ilma käibemaksuta)

€ 102,18

€ 0,255 tk (rullis) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 DMP2008UFG-7

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Rull
400 - 975€ 0,206€ 5,15
1000+€ 0,16€ 4,00

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

3.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more