Diodes Inc DMT Dual N-Channel MOSFET, 7.6 A, 60 V, 8-Pin SOIC DMTH6016LSD-13

RS tootekood: 146-4775PBränd: DiodesZetexTootja Part nr.: DMTH6016LSD-13
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

7.6 A

Maximum Drain Source Voltage

60 V

Series

DMT

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.4 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

3.95mm

Length

4.95mm

Typical Gate Charge @ Vgs

17 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.5mm

Automotive Standard

AEC-Q101

Toote üksikasjad

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 32,55

tk (rullis) (ilma käibemaksuta)

€ 39,71

tk (rullis) (koos käibemaksuga)

Diodes Inc DMT Dual N-Channel MOSFET, 7.6 A, 60 V, 8-Pin SOIC DMTH6016LSD-13
Valige pakendi tüüp

€ 32,55

tk (rullis) (ilma käibemaksuta)

€ 39,71

tk (rullis) (koos käibemaksuga)

Diodes Inc DMT Dual N-Channel MOSFET, 7.6 A, 60 V, 8-Pin SOIC DMTH6016LSD-13
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

7.6 A

Maximum Drain Source Voltage

60 V

Series

DMT

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.4 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

3.95mm

Length

4.95mm

Typical Gate Charge @ Vgs

17 @ 10 V nC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.5mm

Automotive Standard

AEC-Q101

Toote üksikasjad

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more