Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA

RS tootekood: 823-4059Bränd: DiodesZetexTootja Part nr.: ZXMC4559DN8TA
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

2.6 A, 4.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ, 125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

20.4 nC @ 10 V, 24.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 14,54

€ 0,727 tk (pakis 20) (ilma käibemaksuta)

€ 17,74

€ 0,887 tk (pakis 20) (koos käibemaksuga)

Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA
Valige pakendi tüüp

€ 14,54

€ 0,727 tk (pakis 20) (ilma käibemaksuta)

€ 17,74

€ 0,887 tk (pakis 20) (koos käibemaksuga)

Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
20 - 240€ 0,727€ 14,54
260+€ 0,583€ 11,66

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

2.6 A, 4.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ, 125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

20.4 nC @ 10 V, 24.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more