Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

RS tootekood: 827-5344PBränd: InfineonTootja Part nr.: BSC052N03LSATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

5.35mm

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 14,48

€ 0,579 tk (rullis) (ilma käibemaksuta)

€ 17,95

€ 0,718 tk (rullis) (koos käibemaksuga)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 25.

Tootmine -

Saadaval mitmekordselt 25.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

25

Saadaval mitmekordselt 25
25€ 14,48
50€ 28,95
75€ 43,42
100€ 57,90
125€ 72,38
150€ 86,85
175€ 101,32
200€ 115,80
225€ 130,28
250€ 144,75
275€ 159,22
300€ 173,70
325€ 188,18
350€ 202,65
375€ 217,12

€ 14,48

€ 0,579 tk (rullis) (ilma käibemaksuta)

€ 17,95

€ 0,718 tk (rullis) (koos käibemaksuga)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Tootmispakett (Rull)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 25.

Tootmine -

Saadaval mitmekordselt 25.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

25

Saadaval mitmekordselt 25
25€ 14,48
50€ 28,95
75€ 43,42
100€ 57,90
125€ 72,38
150€ 86,85
175€ 101,32
200€ 115,80
225€ 130,28
250€ 144,75
275€ 159,22
300€ 173,70
325€ 188,18
350€ 202,65
375€ 217,12

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

5.35mm

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more