Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Päritoluriik
Malaysia
Toote üksikasjad
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 388,00
€ 0,388 tk (rullis 1000) (ilma käibemaksuta)
€ 473,36
€ 0,473 tk (rullis 1000) (koos käibemaksuga)
1000
€ 388,00
€ 0,388 tk (rullis 1000) (ilma käibemaksuta)
€ 473,36
€ 0,473 tk (rullis 1000) (koos käibemaksuga)
1000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
1000 - 1000 | € 0,388 | € 388,00 |
2000 - 2000 | € 0,368 | € 368,00 |
3000+ | € 0,346 | € 346,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Päritoluriik
Malaysia
Toote üksikasjad
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.