Infineon SIPMOS® P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1

RS tootekood: 753-2848Bränd: InfineonTootja Part nr.: BSS192PH6327FTSA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-89

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

4.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Width

2.5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 4,20

€ 0,42 tk (pakis 10) (ilma käibemaksuta)

€ 5,12

€ 0,512 tk (pakis 10) (koos käibemaksuga)

Infineon SIPMOS® P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 10.

Tootmine -

Saadaval mitmekordselt 10.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

10

Saadaval mitmekordselt 10
10€ 4,20
20€ 8,40
30€ 12,60
40€ 16,80
50€ 21,00
60€ 25,20
70€ 29,40
80€ 33,60
90€ 37,80
100€ 39,90
110€ 43,89
120€ 47,88
130€ 51,87
140€ 55,86
150€ 59,85

€ 4,20

€ 0,42 tk (pakis 10) (ilma käibemaksuta)

€ 5,12

€ 0,512 tk (pakis 10) (koos käibemaksuga)

Infineon SIPMOS® P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 10.

Tootmine -

Saadaval mitmekordselt 10.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

10

Saadaval mitmekordselt 10
10€ 4,20
20€ 8,40
30€ 12,60
40€ 16,80
50€ 21,00
60€ 25,20
70€ 29,40
80€ 33,60
90€ 37,80
100€ 39,90
110€ 43,89
120€ 47,88
130€ 51,87
140€ 55,86
150€ 59,85

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
10 - 90€ 0,42€ 4,20
100 - 240€ 0,399€ 3,99
250 - 490€ 0,391€ 3,91
500 - 990€ 0,366€ 3,66
1000+€ 0,34€ 3,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-89

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

4.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Width

2.5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more