Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
4kbit
Organisation
512 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Automotive Standard
AEC-Q100
Number of Words
512
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Toote üksikasjad
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 28,50
€ 1,90 tk (torus) (ilma käibemaksuta)
€ 35,34
€ 2,356 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
15
€ 28,50
€ 1,90 tk (torus) (ilma käibemaksuta)
€ 35,34
€ 2,356 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
15
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
15 - 25 | € 1,90 | € 9,50 |
30 - 95 | € 1,85 | € 9,25 |
100 - 495 | € 1,75 | € 8,75 |
500+ | € 1,65 | € 8,25 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
4kbit
Organisation
512 x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Automotive Standard
AEC-Q100
Number of Words
512
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Toote üksikasjad
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.