Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1

RS tootekood: 171-1937PBränd: InfineonTootja Part nr.: IPD053N08N3GATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 3

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.36mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

52 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Lao andmed ajutiselt ei ole saadaval.

€ 13,00

€ 1,30 tk (rullis) (ilma käibemaksuta)

€ 16,12

€ 1,612 tk (rullis) (koos käibemaksuga)

Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1
Valige pakendi tüüp

€ 13,00

€ 1,30 tk (rullis) (ilma käibemaksuta)

€ 16,12

€ 1,612 tk (rullis) (koos käibemaksuga)

Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK IPD053N08N3GATMA1
Lao andmed ajutiselt ei ole saadaval.
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Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 3

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.36mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

52 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more